Intrinsic Phonon Bands in High-Quality Monolayer T′ Molybdenum Ditelluride

被引:41
作者
Chen, Shao-Yu [1 ]
Naylor, Carl H. [2 ]
Goldstein, Thomas [1 ]
Johnson, A. T. Charlie [2 ]
Yan, Jun [1 ]
机构
[1] Univ Massachusetts, Dept Phys, Amherst, MA 01003 USA
[2] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA
基金
美国国家科学基金会;
关键词
transition-metal dichalcogenide; monolayer T ' molybdenum ditelluride; Raman scattering; anisotropy; topological insulator; crystal quality; RAMAN-SCATTERING; LATTICE-DYNAMICS; THIN-FILMS; TRANSITION; SPIN; OPTOELECTRONICS; NANOSHEETS; SPECTRA; WTE2;
D O I
10.1021/acsnano.6b07260
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The topologically nontrivial and chemically functional distorted octahedral (T') transition-metal dichalcogenides (TMDCs) are a type of layered semimetal that has attracted significant recent attention. However, the properties of monolayer (1L) T'-TMDC, a fundamental unit of the system, are still largely unknown due to rapid sample degradation in air. Here we report that well-protected 1L CVD T'-MoTe2 exhibits sharp and robust intrinsic Raman bands, with intensities about 1 order of magnitude stronger than those from bulk T'-MoTe2. The high-quality samples enabled us to reveal the set of all nine even-parity zone-center optical phonons, providing reliable fingerprints for the previously elusive crystal. By performing light polarization and crystal orientation resolved scattering analysis, we can effectively distinguish the intrinsic modes from Te-metalloid-like modes A (similar to 122 cm(-1)) and B (similar to 141 cm(-1)), which are related to the sample degradation. Our studies offer a powerful nondestructive method for assessing sample quality and for monitoring sample degradation in situ, representing a solid advance in understanding the fundamental properties of 1L-T'-TMDCs.
引用
收藏
页码:814 / 820
页数:7
相关论文
共 38 条
  • [1] Acerce M, 2015, NAT NANOTECHNOL, V10, P313, DOI [10.1038/NNANO.2015.40, 10.1038/nnano.2015.40]
  • [2] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
    CAMPBELL, IH
    FAUCHET, PM
    [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
  • [3] Activation of New Raman Modes by Inversion Symmetry Breaking in Type II Weyl Semimetal Candidate T′-MoTe2
    Chen, Shao-Yu
    Goldstein, Thomas
    Venkatararnan, Dhandapani
    Ramasubramaniam, Ashwin
    Yan, Jun
    [J]. NANO LETTERS, 2016, 16 (09) : 5852 - 5860
  • [4] Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/nchem.1589, 10.1038/NCHEM.1589]
  • [5] Phase patterning for ohmic homojunction contact in MoTe2
    Cho, Suyeon
    Kim, Sera
    Kim, Jung Ho
    Zhao, Jiong
    Seok, Jinbong
    Keum, Dong Hoon
    Baik, Jaeyoon
    Choe, Duk-Hyun
    Chang, K. J.
    Suenaga, Kazu
    Kim, Sung Wng
    Lee, Young Hee
    Yang, Heejun
    [J]. SCIENCE, 2015, 349 (6248) : 625 - 628
  • [6] Raman scattering and anomalous Stokes-anti-Stokes ratio in MoTe2 atomic layers
    Goldstein, Thomas
    Chen, Shao-Yu
    Tong, Jiayue
    Xiao, Di
    Ramasubramaniam, Ashwin
    Yan, Jun
    [J]. SCIENTIFIC REPORTS, 2016, 6
  • [7] Hahn T., 2002, Int. Tables Crystallogr, VA, DOI [DOI 10.1107/97809553602060000100, DOI 10.1107/97809553602060000505]
  • [8] Absorption dichroism of monolayer 1T′-MoTe2 in visible range
    Han, Gang Hee
    Keum, Dong Hoon
    Zhao, Jiong
    Shin, Bong Gyu
    Song, Seunghyun
    Bae, Jung Jun
    Lee, Jubok
    Hokim, Jung
    Kim, Hyun
    Moon, Byoung Hee
    Lee, Young Hee
    [J]. 2D MATERIALS, 2016, 3 (03):
  • [9] Raman fingerprint for semi-metal WTe2 evolving from bulk to monolayer
    Jiang, Y. C.
    Gao, J.
    Wang, L.
    [J]. SCIENTIFIC REPORTS, 2016, 6
  • [10] Keum DH, 2015, NAT PHYS, V11, P482, DOI [10.1038/nphys3314, 10.1038/NPHYS3314]