Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

被引：4

作者：

Liu, Z. H. ^{[1
]}

Arulkumaran, S. ^{[1
]}

Ng, G. I. ^{[1
]}

Cheong, W. C. ^{[1
]}

Zeng, R. ^{[1
]}

Bu, J. ^{[1
]}

Wang, H. ^{[1
]}

Radhakrishnan, K. ^{[1
]}

Tan, C. H. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch EEE, Singapore 639798, Singapore

来源：

2005 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: INTEGRATED CIRCUITS FOR WIDEBAND COMMUNICATION AND WIRELESS SENSOR NETWORKS | 2005年

关键词：

high-electron-mobility transistors; microwave measurements; microwave power amplifiers; semiconductor device fabrication; semiconductor device noise;

D O I：

10.1109/RFIT.2005.1598891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-mu m- and 0.3-mu m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f(T) values of 7 GHz, 22 GHz and maximum oscillation frequency f(max) values of 23 GHz, 40 GHz were achieved for 0.8-mu m- and 0.3-mu m-gate-length device, respectively. A minimum noise figure (NFmin) of 2.0 dB and an associate gain (G(ass)) of 10.3 dB were achieved at 10GHz in 0.3-mu m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.

引用

页码：127 / 130

页数：4

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