Elastic effects and phase segregation during the growth of thin alloy layers by molecular-beam epitaxy

被引：28
作者：
Leonard, F
Desai, RC
机构：
[1] Department of Physics, University of Toronto, Toronto, ON
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.56.4955
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We explore the effects of stress and strain on the composition modulations seen during the growth of thin solid films by molecular-beam epitaxy when phase separation is the driving mechanism for the concentration inhomogeneity. A top view of the growing thin film shows lamellar and hexagonal patterns of phase-separated domains, the elastic effects being directly responsible for the appearance of the hexagonal order. We find that in the lamellar regime, elastically deformed lamellae are separated by undeformed interfaces, while in the droplet phase, the soft component is deformed and wraps the hard component. We also discuss the effects of crystal anisotropy in our system.
引用
收藏
页码：4955 / 4965
页数：11
相关论文
共 50 条
[31]   BORON SURFACE SEGREGATION IN SILICON MOLECULAR-BEAM EPITAXY [J].
DEFRESART, E ;
WANG, KL ;
RHEE, SS .
APPLIED PHYSICS LETTERS, 1988, 53 (01) :48-50
[32]   HIGH MOBILITY GAINAS THIN-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MIZUTANI, T ;
HIROSE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L119-L121
[33]   GROWTH OF MICROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J].
GOSSARD, AC .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1649-1655
[34]   GROWTH OF INGAASP BY MOLECULAR-BEAM EPITAXY [J].
HOLAH, GD ;
EISELE, FL ;
MEEKS, EL ;
COX, NW .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1073-1075
[35]   SURFACE DYNAMICS DURING CDTE GROWTH BY MOLECULAR-BEAM EPITAXY [J].
ARNOULT, A ;
CIBERT, J .
APPLIED PHYSICS LETTERS, 1995, 66 (18) :2397-2399
[36]   Numerical simulation of film growth during molecular-beam epitaxy [J].
Evtikhov, M. G. ;
Nikitov, S. A. .
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2007, 52 (08) :860-864
[37]   PHASE-EQUILIBRIA DURING INSB MOLECULAR-BEAM EPITAXY [J].
TSAO, JY .
JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) :595-603
[38]   Numerical simulation of film growth during molecular-beam epitaxy [J].
M. G. Evtikhov ;
S. A. Nikitov .
Journal of Communications Technology and Electronics, 2007, 52 :860-864
[39]   GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC .
APPLIED PHYSICS LETTERS, 1980, 36 (09) :741-743
[40]   NUCLEATION DURING MOLECULAR-BEAM EPITAXY [J].
ZHDANOV, VP ;
NORTON, PR .
APPLIED SURFACE SCIENCE, 1994, 81 (02) :109-117
12345