Elastic effects and phase segregation during the growth of thin alloy layers by molecular-beam epitaxy

被引:28
作者
Leonard, F
Desai, RC
机构
[1] Department of Physics, University of Toronto, Toronto, ON
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 08期
关键词
D O I
10.1103/PhysRevB.56.4955
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We explore the effects of stress and strain on the composition modulations seen during the growth of thin solid films by molecular-beam epitaxy when phase separation is the driving mechanism for the concentration inhomogeneity. A top view of the growing thin film shows lamellar and hexagonal patterns of phase-separated domains, the elastic effects being directly responsible for the appearance of the hexagonal order. We find that in the lamellar regime, elastically deformed lamellae are separated by undeformed interfaces, while in the droplet phase, the soft component is deformed and wraps the hard component. We also discuss the effects of crystal anisotropy in our system.
引用
收藏
页码:4955 / 4965
页数:11
相关论文
共 50 条
  • [21] INDIUM INCORPORATION DURING THE GROWTH OF (100) SI BY MOLECULAR-BEAM EPITAXY - SURFACE SEGREGATION AND RECONSTRUCTION
    KNALL, J
    SUNDGREN, JE
    GREENE, JE
    ROCKETT, A
    BARNETT, SA
    APPLIED PHYSICS LETTERS, 1984, 45 (06) : 689 - 691
  • [22] MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INSB LAYERS ON GAAS SUBSTRATES
    SODERSTROM, JR
    CUMMING, MM
    YAO, JY
    ANDERSSON, TG
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) : 337 - 343
  • [23] Growth of GaAs1-xBix Layers by Molecular-Beam Epitaxy
    Semyagin, B. R.
    Kolesnikov, A. V.
    Putyato, M. A.
    Preobrazhenskii, V. V.
    Popova, T. B.
    Ushanov, V. I.
    Chaldyshev, V. V.
    SEMICONDUCTORS, 2023, 57 (09) : 405 - 409
  • [24] Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy
    Denisov, S. A.
    Chalkov, V. Yu.
    Shengurov, V. G.
    Svetlov, S. P.
    Pavlov, D. A.
    Pitirimova, E. A.
    INORGANIC MATERIALS, 2010, 46 (07) : 693 - 702
  • [25] Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy
    S. A. Denisov
    V. Yu. Chalkov
    V. G. Shengurov
    S. P. Svetlov
    D. A. Pavlov
    E. A. Pitirimova
    Inorganic Materials, 2010, 46 : 693 - 702
  • [26] Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy
    B. R. Semyagin
    A. V. Kolesnikov
    M. A. Putyato
    V. V. Preobrazhenskii
    T. B. Popova
    V. I. Ushanov
    V. V. Chaldyshev
    Semiconductors, 2023, 57 : 405 - 409
  • [27] THE GROWTH OF HIGH MOBILITY INGAAS AND INAIAS LAYERS BY MOLECULAR-BEAM EPITAXY
    LEE, W
    FONSTAD, CG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 536 - 538
  • [28] ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY PRODUCED HGCDTE LAYERS DOPED DURING GROWTH
    BOUKERCHE, M
    WIJEWARNASURIYA, PS
    RENO, J
    SOU, IK
    FAURIE, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2072 - 2076
  • [29] EFFECTS OF THE ELASTIC STRAINS AND RELAXATIONS ON IN-INCORPORATION IN (AL,IN)AS PSEUDOMORPHIC LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    TURCO, F
    MBAYE, AA
    MASSIES, J
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 201 - 201
  • [30] A MICROKINETIC MODEL FOR DOPING OF SILICON LAYERS DURING MOLECULAR-BEAM EPITAXY
    VASILEVSKIY, MI
    ANDREEV, AY
    KUZNETSOV, VP
    SURFACE SCIENCE, 1993, 297 (02) : 151 - 161