Simulation of doping effect for HfO2-based RRAM based on first-principles calculations

被引：0
作者：
Wei, Wei [1 ,2 ]
Chuai, Xichen [1 ,3 ]
Lu, Nianduan [1 ,3 ]
Wang, Yan [1 ,3 ]
Li, Ling [1 ,3 ]
Ye, Cong [2 ]
Liu, Ming [1 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] Hubei Univ, Wuhan 430062, Hubei, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017) | 2017年
基金：
中国国家自然科学基金;
关键词：
first-principles calculations; activation energy; resistive switching random access memory; doping effect;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physical model of revealing the charge carrier transport characteristics based on first-principles calculations has been proposed for oxide-based RRAM. Based on the proposed model, we have investigated the influence of different kinds of dopants on transport characteristics in HfO2-based RRAM. The present method will be contributed to clearly understand the dopant effect, and then tune the RRAM performance and better design RRAM device.
引用
收藏
页码：21 / 24
页数：4
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