Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties

被引：3

作者：

Ohmori, Masato ^{[1
]}

Vitushinskiy, Pavel ^{[1
]}

Kojima, Tomoya ^{[1
]}

Sakaki, Hiroyuki ^{[1
]}

机构：

[1] Toyota Technol Inst, Nagoya, Aichi 4680034, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 04期

关键词：

FIELD-EFFECT TRANSISTOR; OPTICAL-PROPERTIES; THRESHOLD CURRENT; DEVICE; PHOTOLUMINESCENCE; POLARIZATION; PHOTONS; POSTS;

D O I：

10.7567/APEX.6.045003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaInAs nanowires or rods of 20-40nm diameter were formed by depositing an AlGaAs/GaAs/InAs short-period superlattice onto self-organized InAs quantum dots on GaAs. The In content is found to be substantially higher in the rods than in the superlattice matrix, implying that rods serve as favorable paths for electrons. Transport properties measured at 4.2 K on a sample where 79-nm-long rods are buried between n(+)-GaAs electrodes show that rods are indeed far more conductive than their matrix barrier. Photoluminescence study has indicated that photogenerated carriers recombine mostly in the seed dot portion of rods. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

共 25 条

[1] Strain balanced quantum posts
Alonso-Alvarez, D.
Alen, B.
Ripalda, J. M.
Llorens, J. M.
Taboada, A. G.
Briones, F.
Roldan, M. A.
Hernandez-Saz, J.
Hernandez-Maldonado, D.
Herrera, M.
Molina, S. I.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (17)
[2] CALCULATION OF TRANSMISSION TUNNELING CURRENT ACROSS ARBITRARY POTENTIAL BARRIERS
ANDO, Y
ITOH, T
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1497 - 1502
[3] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
ARAKAWA, Y
SAKAKI, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
[4] Efficient single photon detection by quantum dot resonant tunneling diodes
Blakesley, JC
See, P
Shields, AJ
Kardynal, BE
Atkinson, P
Farrer, I
Ritchie, DA
[J]. PHYSICAL REVIEW LETTERS, 2005, 94 (06) : 1 - 4
[5] Artificial control of optical gain polarization by stacking quantum dot layers
Kita, T.
Tamura, N.
Wada, O.
Sugawara, M.
Nakata, Y.
Ebe, H.
Arakawa, Y.
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (21)
[6] Kita T, 2002, JPN J APPL PHYS 2, V41, pL1143, DOI [10.1143/JJAP.41.L1143, 10.1143/JJAP.4l.L1143]
[7] Growth and optical properties of self-assembled InGaAs quantum posts
Krenner, H. J.
Pryor, C.
He, J.
Zhang, J. P.
Wu, Y.
Morris, C. M.
Sherwin, M. S.
Petroff, P. M.
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06) : 1785 - 1789
[8] A semiconductor exciton memory cell based on a single quantum nanostructure
Krenner, Hubert J.
Pryor, Craig E.
He, Jun
Petroff, Pierre M.
[J]. NANO LETTERS, 2008, 8 (06) : 1750 - 1755
[9] Quantum posts with tailored structural, electronic and optical properties for optoelectronic and quantum electronic device applications
Krenner, Hubert J.
Petroff, Pierre M.
[J]. SOLID STATE COMMUNICATIONS, 2009, 149 (35-36) : 1386 - 1394
[10] Growth and characterization of InAs columnar quantum dots on GaAs substrate
Li, L. H.
Patriarche, G.
Rossetti, M.
Fiore, A.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (03)

← 1 2 3 →