Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure

被引：77

作者：

Wetzel, C ^{[1
]}

Walukiewicz, W ^{[1
]}

Haller, EE ^{[1
]}

Ager, J ^{[1
]}

Grzegory, I ^{[1
]}

Porowski, S ^{[1
]}

Suski, T ^{[1
]}

机构：

[1] POLISH ACAD SCI,UNIPRESS,PL-01142 WARSAW,POLAND

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.53.1322

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A quantitative study of the carrier localization in GaN under large hydrostatic pressure is presented using infrared reflection and Raman spectroscopy. The free-carrier concentration in as-grown n-type GaN crystals is determined optically from the phonon-plasmon-coupled mode and an analysis of the dielectric function. A strong decrease from 1x10(19) cm(-3) at ambient pressure to only 3x10(17) cm(-3) at a pressure of 27 GPa is observed. This free-carrier reduction is attributed to a strongly localized donor present at a concentration of 1x10(19) cm(-3) and it is in agreement with previous qualitative results. From our quantitative data we determine the position of the neutral-donor level to be 126(-5)(+20) meV below the conduction band at 27 GPa. We present a model for the pressure dependence of the localized defect and predict its neutral level at 0.40 +/- 0.10 eV above the conduction-band edge at ambient pressure.

引用

页码：1322 / 1326

页数：5

共 37 条

[1] CONDUCTIVITY CONTROL OF GAN AND FABRICATION OF UV/BLUE GAN LIGHT-EMITTING DEVICES [J].