RETRACTED: Quasi-Single-Grain Pb(Zr,Ti)O3 on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device (Retracted Article)

被引：12
作者：
Park, Jae Hyo [1 ]
Joo, Seung Ki [1 ]
机构：
[1] Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2015年 / 15卷 / 03期
关键词：
Poly-Si thin-film transistor; nonvolatile memory; grain boundary; retention time; fatigue cycle; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; ELECTRICAL-PROPERTIES; INTEGRATION; CRYSTALLIZATION; FABRICATION;
D O I：
10.1109/TDMR.2015.2455506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quasi-single-grained Pb(Zr,Ti)O-3 (PZT) was successfully grown for the gate dielectric of a poly-Si thin-film transistor (TFT) in a metal-ferroelectric-insulator-semiconductor memory structure. The quasi-single-grained PZT was obtained by controlling the artificial nucleation formed by Pt dot arrays and was enlarged by the nucleated PZT seeds until it covers the poly-Si channel. The single-grained diameter size was 40 mu m with a (100) dominated texture. The poly-Si memory device with the single-grained PZT showed excellent ferroelectric, electrical, and reliability properties compared with the poly-Si memory device with poly-grained PZT. Moreover, eliminating the grain boundary in a PZT film showed the fatigue and retention characteristics with only 1.1% after 10(13) cycles and 22% after 1 month.
引用
收藏
页码：417 / 422
页数：6
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