RETRACTED: Quasi-Single-Grain Pb(Zr,Ti)O3 on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device (Retracted Article)

被引：12

作者：

Park, Jae Hyo ^{[1
]}

Joo, Seung Ki ^{[1
]}

机构：

[1] Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2015年 / 15卷 / 03期

关键词：

Poly-Si thin-film transistor; nonvolatile memory; grain boundary; retention time; fatigue cycle; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; ELECTRICAL-PROPERTIES; INTEGRATION; CRYSTALLIZATION; FABRICATION;

D O I：

10.1109/TDMR.2015.2455506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quasi-single-grained Pb(Zr,Ti)O-3 (PZT) was successfully grown for the gate dielectric of a poly-Si thin-film transistor (TFT) in a metal-ferroelectric-insulator-semiconductor memory structure. The quasi-single-grained PZT was obtained by controlling the artificial nucleation formed by Pt dot arrays and was enlarged by the nucleated PZT seeds until it covers the poly-Si channel. The single-grained diameter size was 40 mu m with a (100) dominated texture. The poly-Si memory device with the single-grained PZT showed excellent ferroelectric, electrical, and reliability properties compared with the poly-Si memory device with poly-grained PZT. Moreover, eliminating the grain boundary in a PZT film showed the fatigue and retention characteristics with only 1.1% after 10(13) cycles and 22% after 1 month.

引用

页码：417 / 422

页数：6

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