Role of the Ge surface during the end of range dissolution

被引：9
作者：
Boninelli, S. [1 ,2 ]
Impellizzeri, G. [1 ,2 ]
Alberti, A. [3 ]
Priolo, F. [1 ,2 ]
Cristiano, F. [4 ,5 ]
Spinella, C. [3 ]
机构：
[1] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy
[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[3] CNR IMM, I-95121 Catania, Italy
[4] CNRS, LAAS, F-31400 Toulouse, France
[5] Univ Toulouse, LAAS, F-31400 Toulouse, France
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 16期
关键词：
DEFECTS; DIFFUSION; SILICON; LOOPS;
D O I：
10.1063/1.4759031
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the structure of end-of-range (EOR) defects in Ge and the role played by the surface during their dissolution caused by annealing. Ge samples were amorphized with Ge+ ions at two different energies (30 and 100 keV) in order to induce, after solid phase epitaxial regrowth, the formation of EOR band at different depths. High resolution x-ray diffraction and transmission electron microscopy showed that the EOR population consists mainly on small defects and few dislocation loops lying on < 001 > planes. The deepest EOR defects are more stable during thermal annealing demonstrating the role of the surface during their dissolution. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759031]
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页数：4
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