Characterization of off-axis MgB2 epitaxial thin films for planar junctions -: art. no. 242506

被引:15
作者
Iavarone, M
Karapetrov, G
Menzel, A
Komanicky, V
You, H
Kwok, WK
Orgiani, P
Ferrando, V
Xi, XX
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[3] Univ Naples Federico II, INFM Coherentia, I-80125 Naples, Italy
[4] Univ Genoa, INFM, LAMIA, I-16146 Genoa, Italy
[5] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[6] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2140473
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using scanning tunneling spectroscopy, we perform a full mapping of the quasiparticle density of states of magnesium diboride (MgB2) epitaxial thin films grown on (110) yttrium stabilized zirconia (YSZ) by hybrid physical-chemical vapor deposition. The films have critical temperatures of 40 K. X-ray measurements show an epitaxial MgB2 growth having the c-axis tilted by 32 degrees with respect to the normal to the substrate, consistent with the atomic force microscopy images of the sample. Scanning tunneling spectroscopy clearly finds that the spectroscopic peak associated to the pi gap is reduced on most of the film surface and the feature representative of the sigma gap is present, with different intensity, on the majority of the sample's surface, which is consistent with x-ray measurements.
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页码:1 / 3
页数:3
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