Baric properties of InAs quantum dots

被引：18

作者：

Novikov, B. V. ^{[1
]}

Zegrya, G. G. ^{[2
]}

Peleshchak, R. M. ^{[3
]}

Dan'kiv, O. O. ^{[3
]}

Gaisin, V. A. ^{[1
]}

Talalaev, V. G. ^{[1
,4
]}

Shtrom, I. V. ^{[1
]}

Cirlin, G. E. ^{[2
,5
,6
]}

机构：

[1] St Petersburg State Univ, Fock Inst Phys, St Petersburg 198504, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Drogobych State Pedagog Univ, UA-82100 Drogobych, Ukraine

[4] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[5] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia

[6] Russian Acad Sci, Inst Analyt Instrument Making, St Petersburg 198103, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063782608090133

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the context of the deformation potential model, baric dependences of the energy structure of InAs quantum dots in a GaAs matrix are calculated. Under the assumption of the absence of interaction between the spherical quantum dots of identical sizes, the energy dependence of the baric coefficient of energy of the radiative transition in the quantum dot is determined. A similar dependence is also found experimentally in the photoluminescence spectra under uniform compression of the InAs/GaAs structures. Qualitative agreement between the theory and experiment as well as possible causes for their quantitative difference are discussed. It is concluded that such factors as the size dispersion, Coulomb interaction of charge carriers, and tunnel interaction of quantum dots contribute to this difference.

引用

页码：1076 / 1083

页数：8

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