Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

被引：60

作者：

Huang, F. -T. ^{[1
]}

Chu, M. -W. ^{[1
]}

Kung, H. H. ^{[2
]}

Lee, W. L. ^{[2
]}

Sankar, R. ^{[1
]}

Liou, S. -C. ^{[1
]}

Wu, K. K. ^{[1
,3
]}

Kuo, Y. K. ^{[3
]}

Chou, F. C. ^{[1
,4
,5
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[3] Natl Dong Hwa Univ, Dept Phys, Hualien 97401, Taiwan

[4] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[5] Natl Taiwan Univ, Ctr Emerging Mat & Adv Devices, Taipei 10617, Taiwan

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 08期

关键词：

TOPOLOGICAL INSULATOR;

D O I：

10.1103/PhysRevB.86.081104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defects generated. Major defect types of the Bi-Se antisite and partial Bi-2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy, x-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.

引用

页数：5

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