Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO3

被引：17

作者：

Guo, Xin ^{[1
,2
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, Lab Solid State Ion, Wuhan 430074, Peoples R China

[2] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期

关键词：

RESISTIVE SWITCHING MEMORIES; THIN-FILMS; RESISTANCE; CONDUCTIVITY; DEGRADATION; MECHANISM;

D O I：

10.1063/1.4759030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystalline SrTiO3 was used as a model system to evaluate the roles of the Schottky barrier and oxygen vacancies in electroforming. An advantage of single crystalline SrTiO3 is that the electrochemical processes at intermediate temperatures have been thoroughly investigated. To take this advantage, the electroforming was performed at 200 degrees C and subsequently at 24 degrees C; an electrical stress of 4 x 10(3) V/cm, which was about two orders of magnitude lower than the electrical stress in previous works, decreased the cell resistance by orders of magnitude. After the electroforming, bipolar resistive switching was realized at 24 degrees C. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759030]

引用

页数：4

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