Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

被引：92

作者：

Shoji, H

Nakata, Y

Mukai, K

Sugiyama, Y

Sugawara, M

Yokoyama, N

Ishikawa, H

机构：

[1] Fujitsu Laboratories, Ltd., Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 02期

关键词：

D O I：

10.1063/1.120426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependence of self-formed quantum dot lasers with a multi-stacked dot layer has been investigated in detail. Lasers oscillating at different subbands exhibit different behaviors against temperature change both in the spectral characteristics and the threshold current. A discontinuous shift of lasing wavelength from the second subband to the ground state is observed with lowering temperature, which is strongly related to emission efficiency of quantum dots and thermal excitation of carriers to higher-order subbands. High characteristic temperature over 300 K has been achieved in a laser with high-reflection coating on both facets in the temperature range 60-200 K. (C) 1997 American Institute of Physics.

引用

收藏

页码：193 / 195

页数：3

相关论文

共 15 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties [J].

Bimberg, D ;

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, OG ;

Mao, MH ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Gosele, U ;

Heydenreich, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1311-1319

[3]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[4] Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].

Kamath, K ;

Bhattacharya, P ;

Sosnowski, T ;

Norris, T ;

Phillips, J .

ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375

[5] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[6] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[7] SELF-FORMED IN0.5GA0.5AS QUANTUM DOTS ON GAAS SUBSTRATES EMITTING AT 1.3 MU-M [J].

MUKAI, K ;

OHTSUKA, N ;

SUGAWARA, M ;

YAMAZAKI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A) :L1710-L1712

[8]

Mukai K, 1996, APPL PHYS LETT, V68, P3013, DOI 10.1063/1.116681

[9]

NOTZEL R, 1994, APPL PHYS LETT, V65, P457, DOI 10.1063/1.113021

[10] HIGHLY UNIFORM INGAAS/GAAS QUANTUM DOTS (SIMILAR-TO-15 NM) BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

OSHINOWO, J ;

NISHIOKA, M ;

ISHIDA, S ;

ARAKAWA, Y .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1421-1423