Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

被引：92
|
作者：
Shoji, H
Nakata, Y
Mukai, K
Sugiyama, Y
Sugawara, M
Yokoyama, N
Ishikawa, H
机构：
[1] Fujitsu Laboratories, Ltd., Atsugi 243-01
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 02期
关键词：
D O I：
10.1063/1.120426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Temperature dependence of self-formed quantum dot lasers with a multi-stacked dot layer has been investigated in detail. Lasers oscillating at different subbands exhibit different behaviors against temperature change both in the spectral characteristics and the threshold current. A discontinuous shift of lasing wavelength from the second subband to the ground state is observed with lowering temperature, which is strongly related to emission efficiency of quantum dots and thermal excitation of carriers to higher-order subbands. High characteristic temperature over 300 K has been achieved in a laser with high-reflection coating on both facets in the temperature range 60-200 K. (C) 1997 American Institute of Physics.
引用
收藏
页码：193 / 195
页数：3
相关论文
共 50 条
  • [1] Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer
    Shoji, H
    Nakata, Y
    Mukai, K
    Sugiyama, Y
    Sugawara, M
    Yokoyama, N
    Ishikawa, H
    15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST, 1996, : 43 - 44
  • [2] Self-formed InGaAs quantum dot lasers with multi-stacked dot layer
    Shoji, H
    Nakata, Y
    Mukai, K
    Sugiyama, Y
    Sugawara, M
    Yokoyama, N
    Ishikawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (7B): : L903 - L905
  • [3] Multi-stacked InAs/GaAs quantum dot structures and their photovoltaic characteristics
    Kamprachum, S
    Thainoi, S
    Kanjanachuchai, S
    Panyakeow, S
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 259 - 261
  • [4] Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer
    Shoji, H
    Nakata, Y
    Mukai, K
    Sugiyama, Y
    Sugawara, M
    Yokoyama, N
    Ishikawa, H
    ELECTRONICS LETTERS, 1996, 32 (21) : 2023 - 2024
  • [5] Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots
    Tatebayashi, Jun
    Kako, Satoshi
    Ho, Jinfa
    Ota, Yasutomo
    Iwamoto, Satoshi
    Arakawa, Yasuhiko
    2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2015,
  • [6] Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength
    Yang, Tian
    Mock, Adam
    O'Brien, John D.
    OPTICS EXPRESS, 2007, 15 (12) : 7281 - 7289
  • [7] Lasing characteristics of InGaAs/InP quantum dot lasers
    Pyun, S. H.
    Jeong, W. G.
    Ko, D. G.
    Yoon, J. H.
    Jang, J. W.
    Lee, E. G.
    Kim, N. J.
    Lee, D.
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 256 - +
  • [8] Multi-stacked quantum dots with graded dot sizes for photovoltaic applications
    Kamprachum, S
    Kiravittaya, S
    Songmuang, R
    Thainoi, S
    Kanjanachuchai, S
    Sawadsaringkam, M
    Panyakeow, S
    CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, : 1055 - 1057
  • [9] Defect generation in multi-stacked InAs quantum dot/GaAs structures
    Roh, CH
    Park, YJ
    Kim, KM
    Park, YM
    Kim, EK
    Shim, KB
    JOURNAL OF CRYSTAL GROWTH, 2001, 226 (01) : 1 - 7
  • [10] Improved temperature characteristics of highly stacked InGaAs/GaAs quantum dot lasers
    Tanoue, Fumihiko
    Sugawara, Hiroharu
    Akahane, Kouichi
    Yamamoto, Naokatsu
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 2013, 10 (11): : 1461 - 1464
12345