Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes

被引：0

作者：

Aikawa, Kotaro ^{[1
]}

Suhara, Michihiko ^{[1
]}

Kimura, Takumi ^{[1
]}

Wakayama, Junki ^{[1
]}

Makino, Takeshi ^{[1
]}

Usui, Katsuhiro ^{[1
]}

Asakawa, Kiyoto ^{[2
]}

Akahane, Kouichi ^{[3
]}

Watanabe, Issei ^{[3
]}

机构：

[1] Tokyo Metropolitan Univ, Hachiouji Shi 1920397, Japan

[2] Tokyo Metropolitan Coll Ind Technol, Tokyo 1400011, Japan

[3] Natl Inst Informat & Commun Technol NICT, Koganei 1848795, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2022年 / E105C卷 / 10期

关键词：

triple-barrier resonant tunneling diode; InGaAs; InAlAs; admit-tance spectroscopy; Kramers-Kronig relation; Lorentz model; MODEL;

D O I：

10.1587/transele.2021FUS0006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device struc-tures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.

引用

页码：622 / 626

页数：5

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