Effects of rapid thermal annealing on the ferromagnetic properties of sputtered Zn1-x(Co0.5Fe0.5)xO thin films

被引：250
作者：
Cho, YM
Choo, WK
Kim, H
Kim, D
Ihm, Y
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[3] Chungnam Natl Univ, Res Ctr Adv Magnet Mat, Taejon 305764, South Korea
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期
关键词：
D O I：
10.1063/1.1478146
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the effects of rapid thermal annealing under vacuum on the CoFe-doped ZnO [Zn1-x(Co0.5Fe0.5)(x)O] films grown by reactive magnetron co-sputtering. At least up to x=0.15, the films have the single phase of the same wurtzite structure as pure ZnO. Ferromagnetism was observed for the CoFe-doped ZnO films. We found that rapid thermal annealing leads to a remarkable increase in the spontaneous magnetization of the CoFe-doped ZnO as well as the electron concentration. The annealing also leads to a significant increase in the Curie temperature (T-C), resulting in room temperature ferromagnetism with T-C>300 K for the CoFe-doped ZnO films. (C) 2002 American Institute of Physics.
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页码：3358 / 3360
页数：3
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