Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact

被引：39

作者：

Tsuyukuchi, N ^{[1
]}

Nagamarsu, K ^{[1
]}

Hirosi, Y ^{[1
]}

Iwaya, M ^{[1
]}

Kamiyama, S ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, 21st Century COE Program NanoFactory, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 8-11期

关键词：

GaN; normally off mode; heterojunction field-effect transistor; p-type; pn junction; wide band gap; AlGaN/GaN heterostructure;

D O I：

10.1143/JJAP.45.L319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An enhancement-mode AlGaN/GaN heterostructure field-effect transistor (HFET) using a p-type GaN gate was fabricated. Its leakage current density was 18.2 mu A/mm at a gate-source bias of 0 V and a drain-source bias of 20 V, indicating a good pinched-off operation.

引用

页码：L319 / L321

页数：3

共 8 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].