Microwave modeling and parameter extraction method for multilayer on-chip inductors

被引：3

作者：

Gao, Jianjun ^{[1
,2
]}

Yang, Chen ^{[2
]}

机构：

[1] E China Normal Univ, Sch Informat Sci & Technol, Shanghai 200062, Peoples R China

[2] Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai, Peoples R China

来源：

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2013年 / 23卷 / 03期

基金：

中国国家自然科学基金;

关键词：

silicon; on-chip; inductor model; parameter extraction; CIRCUITS; RF;

D O I：

10.1002/mmce.20678

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A new equivalent circuit model for 3D multilayer on-chip inductors based on physical principles is presented in this article. The model consists of multiple elementary cells, and every cell in the distributed model represents a single stacked inductor. The model also takes into account the distributed effect of the via-hole with feedline which is used to connect the test pad to the lowest mental layer. A parameter-extraction approach for proposed model which combines the analytical approach and empirical optimization procedure is investigated. Good agreement is obtained between simulated and measured results for a six metal layers on-chip inductor on silicon in the frequency range of 50 MHz to 20 GHz. (c) 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.

引用

页码：343 / 348

页数：6

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