Microwave modeling and parameter extraction method for multilayer on-chip inductors

被引:3
|
作者
Gao, Jianjun [1 ,2 ]
Yang, Chen [2 ]
机构
[1] E China Normal Univ, Sch Informat Sci & Technol, Shanghai 200062, Peoples R China
[2] Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai, Peoples R China
基金
中国国家自然科学基金;
关键词
silicon; on-chip; inductor model; parameter extraction; CIRCUITS; RF;
D O I
10.1002/mmce.20678
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
A new equivalent circuit model for 3D multilayer on-chip inductors based on physical principles is presented in this article. The model consists of multiple elementary cells, and every cell in the distributed model represents a single stacked inductor. The model also takes into account the distributed effect of the via-hole with feedline which is used to connect the test pad to the lowest mental layer. A parameter-extraction approach for proposed model which combines the analytical approach and empirical optimization procedure is investigated. Good agreement is obtained between simulated and measured results for a six metal layers on-chip inductor on silicon in the frequency range of 50 MHz to 20 GHz. (c) 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.
引用
收藏
页码:343 / 348
页数:6
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