Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

被引：4

作者：

Fu, Y. K. ^{[1
]}

Kuo, C. H. ^{[1
]}

Tun, C. J. ^{[2
]}

Kuo, C. W. ^{[1
]}

Lai, W. C. ^{[3
]}

Chi, G. C. ^{[1
]}

Pan, C. J. ^{[4
]}

Chen, M. C. ^{[5
]}

Hong, H. F. ^{[5
]}

Lan, S. M. ^{[5
]}

机构：

[1] Natl Cent Univ, Dept Opt & Photon, Jhongli 320, Taiwan

[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[3] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[4] Natl Cent Univ, Ctr Opt Sci, Jhongli 320, Taiwan

[5] Inst Nucl Energy Res, Chungli 32023, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 20期

关键词：

Photoluminescence; Metal-organic vapor phase epitaxy; Indium nitride; InGaN buffer layer; Semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.07.067

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

引用

页码：4456 / 4459

页数：4

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