Efficient Modeling and Simulation of Graphene Devices With the LOD-FDTD Method

被引：43

作者：

Ahmed, Iftikhar ^{[1
]}

Khoo, Eng Huat ^{[1
]}

Li, Erping ^{[1
]}

机构：

[1] Inst High Performance Comp, Elect & Photon Dept, Singapore 138632, Singapore

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2013年 / 23卷 / 06期

关键词：

Courant Friedrich Levy (CFL) limit; finite difference time domain (FDTD); graphene; locally one-dimensional FDTD (LOD-FDTD);

D O I：

10.1109/LMWC.2013.2258463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The intraband term of the graphene electronic model is incorporated into Maxwell equations, and then the locally one-dimensional finite difference time domain (LOD-FDTD) method is applied to simulate graphene devices efficiently. Numerical results of the approach are compared with the explicit FDTD method. At Courant Friedrich Levy number (CFLN) equal to 100, the proposed approach is approximately 60% faster in terms of simulation time and with reasonable accuracy as compared to the FDTD method.

引用

页码：306 / 308

页数：3

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