Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Ti and Pd Overlayer

被引：0

作者：

Ishii, Satoshi ^{[1
,2
]}

Tamaoki, Masato ^{[1
]}

Kishimoto, Shigeru ^{[1
,2
]}

Mizutani, Takashi ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 03期

关键词：

INTEGRATED-CIRCUITS; SINGLE; CONTACT; DEVICES; FABRICATION;

D O I：

10.7567/JJAP.52.035203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction-type of carbon nanotube field-effect transistors (CNTFETs) was controlled by depositing metal overlayers with different work functions (Ti and Pd) onto the side surfaces of the CNT channel of the ambipolar CNTFETs. The devices with the Ti overlayer showed n-type conduction. On the other hand, the devices with the Pd overlayer showed p-type conduction. The phenomena were explained by the suppression of carrier injection from the drain contact by the energy barrier formed at the CNT-overlayer source-side contact. (c) 2013 The Japan Society of Applied Physics

引用

页数：4

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