Preliminary design and optimization of a G-band extended interaction oscillator based on a pseudospark-sourced electron beam

被引：40

作者：

Yin, Y. ^{[1
,2
]}

He, W. ^{[2
]}

Zhang, L. ^{[2
]}

Yin, H. ^{[2
]}

Cross, A. W. ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu 610054, Peoples R China

[2] Univ Strathclyde, Dept Phys, Scottish Univ Phys Alliance, Glasgow G4 0NG, Lanark, Scotland

来源：

PHYSICS OF PLASMAS | 2015年 / 22卷 / 07期

基金：

英国工程与自然科学研究理事会; 中国国家自然科学基金;

关键词：

INTERACTION KLYSTRON;

D O I：

10.1063/1.4926512

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The design and simulation of a G-band extended interaction oscillator (EIO) driven by a pseudospark-sourced electron beam is presented. The characteristic of the EIO and the pseudospark-based electron beam were studied to enhance the performance of the newly proposed device. The beam-wave interaction of the EIO can be optimized by choosing a suitable pseudospark discharging voltage and by widening the operating voltage region of the EIO circuit. Simulation results show that a peak power of over 240W can be achieved at G-band using a pseudospark discharge voltage of 41 kV. (C) 2015 AIP Publishing LLC.

引用

页数：6

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