Effect of electron scattering on second derivative ballistic electron emission spectroscopy in Au/GaAs/AlGaAs heterostructures

被引:21
作者
Kozhevnikov, M [1 ]
Narayanamurti, V
Zheng, C
Chiu, YJ
Smith, DL
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA
关键词
D O I
10.1103/PhysRevLett.82.3677
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a quantitative study of the second voltage derivative (SD) of ballistic electron emission spectra of Au/GaAs/AlGaAs heterostructures to probe the effect of electron scattering on these spectra. Our analysis of the SD spectra shows that strong electron scattering occurs at the nonepitaxial Au/GaAs interface, leading to an experimentally observed redistribution of current among the electron transport channels. We also show that the effects of hot-electron scattering inside the semiconductor modify the spectra and are sensitive to the heterojunction band structure, its geometry, and temperature. [S0031-9007(99)09041-9].
引用
收藏
页码:3677 / 3680
页数:4
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