Effect of electron scattering on second derivative ballistic electron emission spectroscopy in Au/GaAs/AlGaAs heterostructures

被引：21

作者：

Kozhevnikov, M ^{[1
]}

Narayanamurti, V

Zheng, C

Chiu, YJ

Smith, DL

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.82.3677

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a quantitative study of the second voltage derivative (SD) of ballistic electron emission spectra of Au/GaAs/AlGaAs heterostructures to probe the effect of electron scattering on these spectra. Our analysis of the SD spectra shows that strong electron scattering occurs at the nonepitaxial Au/GaAs interface, leading to an experimentally observed redistribution of current among the electron transport channels. We also show that the effects of hot-electron scattering inside the semiconductor modify the spectra and are sensitive to the heterojunction band structure, its geometry, and temperature. [S0031-9007(99)09041-9].

引用

页码：3677 / 3680

页数：4

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