Effect of correlations on electronic and magnetic properties of transition metal chalcogenides

被引：5
|
作者：
Anzai, S
机构：
[1] Faculty of Science and Technology, Keio University, Yokohama-shi, 223, 3-14-1, Hiyoshi
来源：
PHYSICA B | 1997年 / 237卷
关键词：
metal-insulator transition; transition metal chalcogenides; localized impurity levels;
D O I：
10.1016/S0921-4526(97)00076-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The magnetic and electrical properties of 3d transition metal chalcogenides are reviewed from the point of view of change of electronic states. The topics are as follows: (1) nonmetallization of weakly and strongly correlated d-band metals, (2) change of chalcogen atoms, (3) strongly correlated materials of Fe and Mn, (4) nonmetal-metal transitions due to localized impurity levels.
引用
收藏
页码：142 / 145
页数：4
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