Design of an Ultra-wideband Pulse Generator Based on Avalanche Transistor

被引:0
作者
Wang, Qing [1 ]
Tian, Xiaojian [1 ]
Liu, Yang [1 ]
Li, Bo [1 ]
Gao, Bo [1 ]
机构
[1] Jilin Univ, Coll Elect Sci & Engn, Changchun 130023, Jilin, Peoples R China
来源
2008 4TH INTERNATIONAL CONFERENCE ON WIRELESS COMMUNICATIONS, NETWORKING AND MOBILE COMPUTING, VOLS 1-31 | 2008年
关键词
ultra-wideband; pulse generator; avalanche effect; nanosecond;
D O I
暂无
中图分类号
TN [电子技术、通信技术];
学科分类号
0809 ;
摘要
Based on the avalanche effect of avalanche transistor, a kind of ultra-wideband nanosecond pulse circuit has been designed, whose frequency, pulse width and amplitude are tunable. In this paper, the principle, structure and selection of components' parameters in the circuit are analyzed in detail. The circuit generates periodic negative pulse, whose pulse full width is 890ps and pulse amplitude is -11.2V in simulation mode. By setting up circuit for experiment and changing parameters properly, a kind of ultra-wideband pulse with pulse width of 2.131ns and pulse amplitude of -9.23V is achieved. With the features such as simple structure, stable and reliable performance and low cost, this pulse generator is applicable to ultra-wideband wireless communication system.
引用
收藏
页码:1101 / 1104
页数:4
相关论文
共 7 条
[1]   Recent system applications of short-pulse ultra-wideband (UWB) technology [J].
Fontana, RJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (09) :2087-2104
[2]   A new ultra-wideband, ultra-short monocycle pulse generator with reduced ringing [J].
Han, JW ;
Nguyen, C .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (06) :206-208
[3]  
LAN H, 1996, ELECTR WORLD, V68, P22
[4]   Novel low-cost ultra-wideband, ultra-short-pulse transmitter with MESFET impulse-shaping circuitry for reduced distortion and improved pulse repetition rate [J].
Lee, JS ;
Nguyen, C .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2001, 11 (05) :208-210
[5]   A uniplanar picosecond impulse generator based on MESFET and SRD [J].
Miao, M ;
Nguyen, C .
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2003, 39 (06) :470-472
[6]  
MOLINA LL, 2002, 28 IEEE INT C PLASM, P178
[7]  
TAKASHI J, 2002, IEEE T ELECTRON DEV, V49, P120