Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors

被引:150
作者
Fang, Jingzhi [1 ,2 ]
Zhou, Ziqi [1 ,2 ]
Xiao, Mengqi [1 ,2 ]
Lou, Zheng [1 ,2 ]
Wei, Zhongming [1 ,2 ,3 ]
Shen, Guozhen [1 ,2 ]
机构
[1] Univ Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Chinese Acad Sci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100083, Peoples R China
[3] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
基金
中国国家自然科学基金;
关键词
flexible devices; low-dimensional semiconductor materials; photodetectors; GRAPHENE QUANTUM DOTS; ELECTRON-MOBILITY; SINGLE-LAYER; ULTRAVIOLET PHOTORESPONSIVITY; 2-DIMENSIONAL MATERIALS; HIGH PHOTOSENSITIVITY; SNSE2(1-X)S2X ALLOYS; LIGHT PHOTODETECTORS; OPTICAL-PROPERTIES; UV PHOTODETECTORS;
D O I
10.1002/inf2.12067
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-dimensional (including two-dimensional [2D], one-dimensional [1D], and zero-dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low-dimensional materials and properties enable wide-spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low-dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low-dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high-performance and multifunctional devices. image
引用
收藏
页码:291 / 317
页数:27
相关论文
共 196 条
[91]   Enhanced photoresponse of monolayer MoS2 through hybridization with carbon quantum dots as efficient photosensitizer [J].
Liu, He ;
Gao, Feng ;
Hu, Yunxia ;
Zhang, Jia ;
Wang, Lifeng ;
Feng, Wei ;
Hou, Juan ;
Hu, PingAn .
2D MATERIALS, 2019, 6 (03)
[92]   Few-layer WO3 nanosheets for high-performance UV-photodetectors [J].
Liu, Jianzhe ;
Zhong, Mianzeng ;
Li, Jingbo ;
Pan, Anlian ;
Zhu, Xiaoli .
MATERIALS LETTERS, 2015, 148 :184-187
[93]   Ultrahigh-Gain Single SnO2 Microrod Photoconductor on Flexible Substrate with Fast Recovery Speed [J].
Liu, Kewei ;
Sakurai, Makoto ;
Aono, Masakazu ;
Shen, Dezhen .
ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (21) :3157-3163
[94]   Hybrid Graphene/Cu2O Quantum Dot Photodetectors with Ultrahigh Responsivity [J].
Liu, Qiaoli ;
Tian, Huijun ;
Li, Jingwei ;
Hu, Anqi ;
He, Xiaoying ;
Sui, Mauling ;
Guo, Xia .
ADVANCED OPTICAL MATERIALS, 2019, 7 (20)
[95]   Controllable Growth of Vertical Heterostructure GaTexSe1-x/Si by Molecular Beam Epitaxy [J].
Liu, Shanshan ;
Yuan, Xiang ;
Wang, Peng ;
Chen, Zhi-Gang ;
Tang, Lei ;
Zhang, Enze ;
Zhang, Cheng ;
Liu, Yanwen ;
Wang, Weiyi ;
Liu, Cong ;
Chen, Chen ;
Zou, Jin ;
Hu, Weida ;
Xiu, Faxian .
ACS NANO, 2015, 9 (08) :8592-8598
[96]   Tuned polarity and enhanced optoelectronic performances of few-layer Nb0.125Re0.875Se2 flakes [J].
Liu, Sijie ;
Huang, Le ;
Wu, Kedi ;
Wei, Zhongming ;
Huang, Beiju ;
Meng, Xiuqing ;
Tongay, Sefaattin ;
Liu, Jian ;
Li, Jingbo ;
Chen, Hongda .
APPLIED PHYSICS LETTERS, 2016, 109 (11)
[97]   Resolving the In-Plane Anisotropic Properties of Black Phosphorus [J].
Liu, Xiaolong ;
Ryder, Christopher R. ;
Wells, Spencer A. ;
Hersam, Mark C. .
SMALL METHODS, 2017, 1 (06)
[98]   Flexible electronics based on inorganic nanowires [J].
Liu, Zhe ;
Xu, Jing ;
Chen, Di ;
Shen, Guozhen .
CHEMICAL SOCIETY REVIEWS, 2015, 44 (01) :161-192
[99]   Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus [J].
Long, Mingsheng ;
Gao, Anyuan ;
Wang, Peng ;
Xia, Hui ;
Ott, Claudia ;
Pan, Chen ;
Fu, Yajun ;
Liu, Erfu ;
Chen, Xiaoshuang ;
Lu, Wei ;
Nilges, Tom ;
Xu, Jianbin ;
Wang, Xiaomu ;
Hu, Weida ;
Miao, Feng .
SCIENCE ADVANCES, 2017, 3 (06)
[100]   Recent Advances in Smart Wearable Sensing Systems [J].
Lou, Zheng ;
Wang, Lili ;
Shen, Guozhen .
ADVANCED MATERIALS TECHNOLOGIES, 2018, 3 (12)