Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing

The systematical low-temperature (4.2 K) photoluminescence (PL) study of the formation kinetics of optically active centers in H and He implanted CZ Si, annealed in the temperature range of 200-1000degreesC is presented. The samples were implanted with H (energy E = 80 keV, dose D = 10(15)/10(16) cm(-2)) and He (E = 150 keV, D = 5 x 10(14) cm(-2)) ions. It was found that the annealing of H or He implanted samples leads to the appearance and evolution of a number of zero-phonon lines as well as of broad bands. The origin of the observed lines and bands is discussed. It is assumed that the strong stresses around hydrogen-related structural defects (voids, bubbles) during the annealing at 500-700degreesC of H implanted Si lead to the formation of a specific optical center M' (similar to1.012 eV PL line). (C) 2001 Elsevier Science B.V. All rights reserved.