Optical investigation of the clean and oxidized in-rich surface of InAs(001)

被引：0
作者：
Witkowski, N
Borensztein, Y
Paget, D
Berkovits, VL
机构：
[1] Univ Paris 06, UMR CNRS 7601, Lab Opt Solides, F-75252 Paris 05, France
[2] Ecole Polytech, Lab PMC, F-91128 Palaiseau, France
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 188卷 / 04期
关键词：
D O I：
10.1002/1521-396X(200112)188:4<1417::AID-PSSA1417>3.0.CO;2-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical anisotropy of the In-rich InAs(001) surface has been studied by the use of reflectance anisotropy spectrocopy. The main spectral line, which is assigned to an optical transition involving In-dimers surface states, is shown to be very sensitive to the adsorption of molecular oxygen at low temperature. The progressive disappearance of the dimer line as a function of oxygen exposure is explained by the chemisorption of oxygen molecules on the In-dimer sites.
引用
收藏
页码：1417 / 1421
页数：5
相关论文
共 16 条
[1]   APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332
[2]   Origin of the optical anisotropy of GaAs (001) [J].
Berkovits, VL ;
Chiaradia, P ;
Paget, D ;
Gordeeva, AB ;
Goletti, C .
SURFACE SCIENCE, 1999, 441 (01) :26-32
[3]  
BERKOVITS VL, 2001, PHYS REV B
[4]   Differential-reflectance spectroscopy and reflectance-anisotropy spectroscopy on semiconductor surfaces [J].
Chiaradia, P ;
Del Sole, R .
SURFACE REVIEW AND LETTERS, 1999, 6 (3-4) :517-528
[5]   REFLECTANCE-DIFFERENCE SPECTROSCOPY OF (001) GAAS-SURFACES IN ULTRAHIGH-VACUUM [J].
KAMIYA, I ;
ASPNES, DE ;
FLOREZ, LT ;
HARBISON, JP .
PHYSICAL REVIEW B, 1992, 46 (24) :15894-15904
[6]  
LANDGREN G, 1984, PHYS REV B, V30, P4893
[7]  
Monch W., 1993, SEMICONDUCTOR SURFAC
[8]   REFLECTANCE ANISOTROPY SPECTROSCOPY - A PROBE FOR SURFACE-CHEMISTRY ON NA2S-PASSIVATED AND (NH4)(2)S-PASSIVATED (001) GAAS [J].
PAGET, D ;
BERKOVITS, VL ;
GUSEV, AO .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (05) :2368-2377
[9]  
Palik ED, 1985, HDB OPTICAL CONSTANT, VI, DOI DOI 10.1016/B978-012544415-6.500002-9
[10]   LOW-TEMPERATURE OXIDATION OF SILICON (111) 7X7 SURFACES [J].
SCHELLSOROKIN, AJ ;
DEMUTH, JE .
SURFACE SCIENCE, 1985, 157 (2-3) :273-296
12