Influence of an internal getter in silicon on the parameters of Au-Si structures

被引：3

作者：

Kiselev, VK ^{[1
]}

Obolenskii, SV ^{[1
]}

Skupov, VD ^{[1
]}

机构：

[1] NI Lobachevskii Nizhnii Novgorod State Univ, Nizhnii Novgorod 603600, Russia

来源：

TECHNICAL PHYSICS | 1999年 / 44卷 / 06期

关键词：

Silicon; Internal Gettering;

D O I：

10.1134/1.1259453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that internal gettering of impurities and defects in Au-Si structures can enhance their reliability and stabilize their characteristics. (C) 1999 American Institute of Physics. [S1063-7842(99)02706-3].

引用

页码：724 / 725

页数：2