Joining of β-SiC by spark plasma sintering

被引：94

作者：

Grasso, Salvatore ^{[1
,2
]}

Tatarko, Peter ^{[3
]}

Rizzo, Stefano ^{[4
]}

Porwal, Harshit ^{[1
,2
]}

Hu, Chunfeng ^{[5
]}

Katoh, Yutai ^{[6
]}

Salvo, Milena ^{[4
]}

Reece, Michael J. ^{[1
,2
]}

Ferraris, Monica ^{[4
]}

机构：

[1] Queen Mary Univ London, Sch Engn & Mat Sci, London E1 4NS, England

[2] Queen Mary Univ London, Nanoforce Technol Ltd, London E1 4NS, England

[3] Acad Sci Czech Republ, Inst Phys Mat, Brno 61662, Czech Republic

[4] Politecn Torino, Inst Mat Phys & Engn, Dept Appl Sci & Technol, I-10129 Turin, Italy

[5] Chinese Acad Sci, NIMTE, Ningbo 315201, Zhejiang, Peoples R China

[6] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2014年 / 34卷 / 07期

关键词：

beta-SiC; Joining; Spark plasma sintering; SILICON-CARBIDE; TEMPERATURE; STRENGTH;

D O I：

10.1016/j.jeurceramsoc.2013.12.023

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Spark plasma sintering (SPS) was employed to join monolithic beta-SiC with or without titanium as intermediate joining material. Both the localized and rapid heating contributed to the inherent energy saving of electric current assisted joining technique. The effects of uniaxial pressure and surface preparation were analyzed independently with respect to the flexural strength and the morphology of the joints. In particular samples polished down to 1 mu m and joined at 1900 degrees C for 5 min achieved the strength of the as received material. The failure occurred outside the joining interface, confirming the optimum quality of the joint. Pressure in combination with surface preparation was necessary to achieve perfect adhesion and pore free direct joining of SiC. The use of Ti foil as a joining material and pressure allowed joining of unpolished SiC. Crown Copyright (C) 2013 Published by Elsevier Ltd. All rights reserved.

引用

页码：1681 / 1686

页数：6

共 25 条

[1]

[Anonymous], 2006, 84312006 EN

[2]

[Anonymous], 2006, 84322006 EN

[3]

Byun TS, 2005, P 30 ANN INT C ADV C

[4] KINETICS AND MECHANISMS OF HIGH-TEMPERATURE CREEP IN SILICON-CARBIDE .2. CHEMICALLY VAPOR-DEPOSITED [J].

CARTER, CH ;

DAVIS, RF ;

BENTLEY, J .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1984, 67 (11) :732-740

[5] Fracture strength of plate and tubular forms of monolithic silicon carbide produced by chemical vapor deposition [J].

Cockeram, Brian Vern .

2002, Blackwell Publishing Inc. (85)

[6] FIELD-ASSISTED BONDING OF BETA-ALUMINA TO METALS [J].

DUNN, B .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1979, 62 (11-1) :545-547

[7] In-vessel component designs for a self-cooled lithium-lead fusion reactor [J].

Giancarli, L ;

Bühler, L ;

Fischer, U ;

Enderle, R ;

Maisonnier, D ;

Pascal, C ;

Pereslavtsev, P ;

Poitevin, Y ;

Portone, A ;

Sardain, P ;

Szczepanski, J ;

Ward, D .

FUSION ENGINEERING AND DESIGN, 2003, 69 (1-4) :763-768

[8] TRANSPARENT CHEMICAL-VAPOR-DEPOSITED BETA-SIC [J].

GOELA, JS ;

BURNS, LE ;

TAYLOR, RL .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :131-133

[9] Electric current activated/assisted sintering (ECAS): a review of patents 1906-2008 [J].

Grasso, Salvatore ;

Sakka, Yoshio ;

Maizza, Giovanni .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2009, 10 (05)

[10]

Gupta AK, 1985, US Patent, Patent No. [4,526,649, 4526649]

← 1 2 3 →