47 GHz VCO with low phase noise fabricated in a SiGe bipolar production technology

被引：19

作者：

Li, H

Rein, HM

Kreienkamp, R

Klein, W

机构：

[1] Ruhr Univ Bochum, D-4630 Bochum, Germany

[2] Infineon Technol, Munich, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 03期

关键词：

low-phase-noise VCO; millimeter-wave VCO; SiGe bipolar technology;

D O I：

10.1109/7260.989857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-phase-noise and low-cost millimeter-wave voltage-controlled oscillator (VCO) has been fully integrated in commercial SiGe bipolar technologies. By varying the bias voltage of the on-chip varactor, the frequency can be continuously tuned from 43.6 to 47.3 GHz. In this frequency range, single-sideband phase noise between -103 and -108.5 dBc/Hz at 1 MHz offset frequency was measured. The output voltage swing of the differential circuit is about 0.85 Vp-p for the single-ended and 1.7 Vp-p for the differential output.

引用

页码：79 / 81

页数：3

共 6 条

[1]

[Anonymous], 1996, FASTHENRY USERS GUID

[2]

KURDOGHLIAN A, IEEE GAAS IC S 2000, P99

[3] SiGe regenerative frequency divider operating up to 63GHz [J].

Müllrich, J ;

Klein, W ;

Khlifi, R ;

Rein, HM .

ELECTRONICS LETTERS, 1999, 35 (20) :1730-1731

[4]

NABORS K, 1996, FASTCAP USERS GUIDE

[5] Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s [J].

Rein, HM ;

Moller, M .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (08) :1076-1090

[6] A 62-GHZ MONOLITHIC INP-BASED HBT VCO [J].

WANG, H ;

CHANG, KW ;

LO, DCW ;

TRAN, LT ;

COWLES, JC ;

BLOCK, TR ;

DOW, GS ;

OKI, A ;

STREIT, DC ;

ALLEN, BR .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (11) :388-390

← 1 →