Flux-dependent electric field changes in semi-insulating CdZnTe

被引:16
作者
Franc, J. [1 ]
Dedic, V. [1 ]
Zazvorka, J. [1 ]
Hakl, M. [1 ]
Grill, R. [1 ]
Sellin, P. J. [2 ]
机构
[1] Charles Univ Prague, Inst Phys, MFF, Prague 2, Czech Republic
[2] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England
基金
英国工程与自然科学研究理事会;
关键词
COMPENSATION PROCESSES; CDTE;
D O I
10.1088/0022-3727/46/23/235306
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied polarization in semi-insulating detector-grade cadmium zinc telluride without and with high optical flux. We employed the Pockels electro-optic effect combined with two perpendicular sources of light. A beam of red light or an infrared laser was applied parallel to the direction of the electric field acting as a source of electron-hole pairs. Infrared radiation from the monochromator illuminated the sample perpendicular to the direction of the electric field and changed the occupation of deep levels and therefore the depth profile of the bulk electric field. Spectral measurements of the Pockels effect were used to determine energy levels responsible for polarization and to find the optimal wavelength for optical depolarization of the detectors.
引用
收藏
页数:4
相关论文
共 13 条
[1]   Nature of polarization in wide-bandgap semiconductor detectors under high-flux irradiation:: Application to semi-insulating Cd1-xZnxTe [J].
Bale, Derek S. ;
Szeles, Csaba .
PHYSICAL REVIEW B, 2008, 77 (03)
[2]   Midgap traps related to compensation processes in CdTe alloys [J].
Castaldini, A ;
Cavallini, A ;
Fraboni, B ;
Fernandez, P ;
Piqueras, J .
PHYSICAL REVIEW B, 1997, 56 (23) :14897-14900
[3]  
Cavallini A, 2004, IEEE NUCL SCI CONF R, P4247
[4]   PHOTOQUENCHING EFFECT AND ITS CONSEQUENCE IN P-TYPE GALLIUM-ARSENIDE [J].
ECHEVERRIA, R ;
VICENT, AB ;
JOSHI, NV .
SOLID STATE COMMUNICATIONS, 1984, 52 (11) :901-904
[5]   Characterization of charge collection in CdTe and CZT using the transient current technique [J].
Fink, J. ;
Krueger, H. ;
Lodomez, P. ;
Wermes, N. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 560 (02) :435-443
[6]   Radiation induced control of electric field in Au/CdTe/In structures [J].
Franc, J. ;
Dedic, V. ;
Sellin, P. J. ;
Grill, R. ;
Veeramani, P. .
APPLIED PHYSICS LETTERS, 2011, 98 (23)
[7]   Fast High-Flux Response of CdZnTe X-Ray Detectors by Optical Manipulation of Deep Level Defect Occupations [J].
Prokesch, Michael ;
Bale, Derek S. ;
Szeles, Csaba .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) :2397-2399
[8]   Drift mobility and mobility-lifetime products in CdTe:Cl grown by the travelling heater method [J].
Sellin, PJ ;
Davies, AW ;
Lohstroh, A ;
Özsan, ME ;
Parkin, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :3074-3078
[9]   POLARIZATION IN CADMIUM TELLURIDE NUCLEAR RADIATION DETECTORS [J].
SIFFERT, P ;
BERGER, J ;
SCHARAGER, C ;
CORNET, A ;
STUCK, R ;
BELL, RO ;
SERREZE, HB ;
WALD, FV .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (01) :159-170
[10]   CdTe/CZT under high flux irradiation [J].
Strassburg, Matthias ;
Schroeter, Christian ;
Hackenschmied, Peter .
JOURNAL OF INSTRUMENTATION, 2011, 6