New electron and hole traps in GaAsP alloy

被引：1

作者：

Teo, KL ^{[1
]}

Li, MF ^{[1
]}

Goo, CH ^{[1
]}

Lau, WS ^{[1
]}

Lim, YT ^{[1
]}

机构：

[1] HEWLETT PACKARD SINGAPORE, SINGAPORE 0410, SINGAPORE

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1997年 / 83卷 / 01期

关键词：

D O I：

10.1080/002072197135616

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.6P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation energy of E-e(A) = 0.83 eV and an abnormally large capture activation energy E-c(A) = 0.73 eV. Hole trap C with thermal emission activation energy of E-e(C) = 0.65 eV is also new and different from previous reports. A critical comparison of traps reported in this work with traps reported in the existing literature is also made.

引用

页码：29 / 35

页数：7

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