New electron and hole traps in GaAsP alloy

被引：1

作者：

Teo, KL ^{[1
]}

Li, MF ^{[1
]}

Goo, CH ^{[1
]}

Lau, WS ^{[1
]}

Lim, YT ^{[1
]}

机构：

[1] HEWLETT PACKARD SINGAPORE, SINGAPORE 0410, SINGAPORE

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1997年 / 83卷 / 01期

关键词：

D O I：

10.1080/002072197135616

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.6P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation energy of E-e(A) = 0.83 eV and an abnormally large capture activation energy E-c(A) = 0.73 eV. Hole trap C with thermal emission activation energy of E-e(C) = 0.65 eV is also new and different from previous reports. A critical comparison of traps reported in this work with traps reported in the existing literature is also made.

引用

页码：29 / 35

页数：7

共 50 条

[31] Hole traps in DNA calculated with exponential electron-lattice coupling
Park, Ji-Hoon
Choi, Han-Yong
Conwell, Esther M.
Journal of Physical Chemistry B, 2004, 108 (50): : 19483 - 19486
[32] NATURE OF ELECTRON AND HOLE TRAPS IN GERMANIUM DIOXIDE THERMALLY GROWN ON GERMANIUM
KARYAGIN, SN
KASHKAROV, PK
KISELEV, VF
KOZLOV, SN
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (01): : K17 - K19
[33] Hole and electron traps in the YAlO3 single crystal scintillator
Laguta, V. V.
Nikl, M.
Vedda, A.
Mihokova, E.
Rosa, J.
Blazek, K.
PHYSICAL REVIEW B, 2009, 80 (04):
[34] ELECTRON AND HOLE TRAPS IN GLOW-DISCHARGE A-SI-H
LANG, DV
COHEN, JD
HARBISON, JP
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 329 - 329
[35] Hole traps in DNA
Conwell, EM
Basko, DM
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (46) : 11441 - 11445
[36] NEW TECHNIQUE FINDS STRAT TRAPS IN DRY HOLE AREAS
HENDERSO.GE
WORLD OIL, 1974, 178 (05) : 87 - 88
[37] Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
Rozen, John
Dhar, Sarit
Zvanut, M. E.
Williams, J. R.
Feldman, L. C.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
[38] INTERRELATION BETWEEN HOLE TRAP AND CERTAIN ELECTRON TRAPS IN GALLIUM-ARSENIDE
ZHOU, JC
LUO, Y
LU, BF
ZHAN, QB
MATERIALS LETTERS, 1989, 7 (11) : 391 - 394
[39] PROPERTIES OF ELECTRON AND HOLE TRAPS IN THERMAL SILICON DIOXIDE LAYERS GROWN ON SILICON
DIMARIA, DJ
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 455 - 455
[40] Photographic effects of electron and positive hole traps in silver halides- 4
TANI T
1600, (16):

← 1 2 3 4 5 →