New electron and hole traps in GaAsP alloy

Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.6P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation energy of E-e(A) = 0.83 eV and an abnormally large capture activation energy E-c(A) = 0.73 eV. Hole trap C with thermal emission activation energy of E-e(C) = 0.65 eV is also new and different from previous reports. A critical comparison of traps reported in this work with traps reported in the existing literature is also made.