Laser damage testing of SiO2 and HfO2 thin films

被引：2

作者：

Di Giulio, M ^{[1
]}

Alvisi, M ^{[1
]}

Perrone, MR ^{[1
]}

Protopapa, ML ^{[1
]}

Valentini, A ^{[1
]}

Vasanelli, L ^{[1
]}

机构：

[1] Ist Nazl Fis Nucl, Dipartimento Sci Mat, I-73100 Lecce, Italy

来源：

ADVANCES IN OPTICAL INTERFERENCE COATINGS | 1999年 / 3738卷

关键词：

SiO2; HfO2; thin film; laser damage; photoacoustic deflection;

D O I：

10.1117/12.360097

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiO2 and HfO2 thin films have been deposited on polished fused silica substrates by the ion assisted electron beam evaporation technique in different deposition conditions. The role of the assisting ion beam parameters either on the optical and structural film properties and the firm damage threshold at 308 nm (XeCl excimer lasers) has been investigated. Laser damage thresholds have been determined by the photoacoustic mirage technique.

引用

页码：337 / 346

页数：10

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