A 13.5-to-17 dBm P1dB, Selective, High-Gain Power Amplifier for 60 GHz Applications in SiGe

被引：7

作者：

Glisic, Srdjan ^{[1
]}

Scheytt, Christoph ^{[1
]}

机构：

[1] IHP, Circuit Design Dept, D-15236 Frankfurt, Germany

来源：

PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2008年

关键词：

D O I：

10.1109/BIPOL.2008.4662713

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated differential power amplifier (PA), produced in 0.25 mu m SiGe:C BiCMOS process for 60 GHz application is presented. Differential 1dB compression point (P1dB) at the output is 13.5 dBm at 61.5 GHz and as high as 17 dBm at 65 GHz. Saturated power is 18.7 dBm at 61.5 GHz and maximum 19 dBm at 66 GHz. PA features three-stage cascade topology with measured gain of 33 dB at 61 GHz. The amplifier is selective with 20 dB image rejection at 51 GHz, which is image frequency for the targeted transmitter architecture. Compact differential design resulted in small size of 0.6 mm(2) with pads. Maximum power-aided efficiency (PAE) is 7.8% for 800 mW power consumption, and 10.2% for 600 mW.

引用

页码：65 / 68

页数：4

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