Scanning tunneling microscopy and spectroscopy study of LiBr/Si(001) heterostructure

被引：3

作者：

Katayama, M

Ueno, K

Koma, A

Kiguchi, M

Saiki, K

机构：

[1] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

[2] Univ Tokyo, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 2A期

关键词：

scanning tunneling microscopy; scanning tunneling spectroscopy; alkali halide; LiBr; Si(001); insulating film;

D O I：

10.1143/JJAP.43.L203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

LiBr/Si(001) heterostructure has been investigated by scanning tunneling microscopy and spectroscopy (STM and STS). In the initial stage of LiBr growth, rectangular islands are observed consisting of accumulation of about 0.2 nm-thick unit layers. The STM results indicate that LiBr grows on Si(001) in a single layer fashion. The STS measurement shows a wide band gap region in I-V curve and the energy gap of the LiBr film shows no thickness dependence down to a nominal thickness of 1.2 monolayer (ML).

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收藏

页码：L203 / L205

页数：3

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