Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

被引:158
作者
Wu, Jiang [1 ]
Chen, Siming [1 ]
Seeds, Alwyn [1 ]
Liu, Huiyun [1 ]
机构
[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
基金
英国工程与自然科学研究理事会;
关键词
quantum dots; laser; detector and solar cells; THRESHOLD CURRENT-DENSITY; SELF-ASSEMBLED INAS; NEGATIVE CHARACTERISTIC TEMPERATURE; LINEWIDTH ENHANCEMENT FACTOR; ISLANDS ACTIVE-REGION; LIGHT-EMITTING DIODE; ROOM-TEMPERATURE; MU-M; BAND SOLAR; INFRARED PHOTODETECTORS;
D O I
10.1088/0022-3727/48/36/363001
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called 'artificial atoms', exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 mu m quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells.
引用
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页数:28
相关论文
共 323 条
  • [1] On the reported experimental evidence for the quasi-Fermi level split in quantum-dot intermediate-band solar cells
    Abouelsaood, Ahmed A.
    Ghannam, Moustafa Y.
    Poortmans, Jef
    [J]. PROGRESS IN PHOTOVOLTAICS, 2013, 21 (02): : 209 - 216
  • [2] Quantum-dot semiconductor optical amplifiers
    Akiyama, Tomoyuki
    Sugawara, Mitsuru
    Arakawa, Yasuhiko
    [J]. PROCEEDINGS OF THE IEEE, 2007, 95 (09) : 1757 - 1766
  • [3] Alferov Z I, 1963, Patent, Patent No. 181737
  • [4] Alferov Z I, 1963, Application, Patent No. 950840
  • [5] Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells
    Alonso-Alvarez, D.
    Taboada, A. G.
    Ripalda, J. M.
    Alen, B.
    Gonzalez, Y.
    Gonzalez, L.
    Garcia, J. M.
    Briones, F.
    Marti, A.
    Luque, A.
    Sanchez, A. M.
    Molina, S. I.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (12)
  • [6] Three-band quantum well infrared photodetector using interband and intersubband transitions
    Alves, F. D. P.
    Amorim, J.
    Byloos, M.
    Liu, H. C.
    Bezinger, A.
    Buchanan, M.
    Hanson, N.
    Karunasiri, G.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (11)
  • [7] NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions
    Alves, Fabio Durante P.
    Karunasiri, G.
    Hanson, N.
    Byloos, M.
    Liu, H. C.
    Bezinger, A.
    Buchanan, M.
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2007, 50 (2-3) : 182 - 186
  • [8] [Anonymous], DEKKER ENCY NANOSCIE
  • [9] Antolin E, 2011, PHOT SPEC C PVSC 201
  • [10] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
    ARAKAWA, Y
    SAKAKI, H
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941