High temperature electrical transport study of Si-doped AlN

被引：11

作者：

Contreras, Sylvie ^{[1
]}

Konczewicz, Leszek ^{[1
]}

Ben Messaoud, Jaweb ^{[1
]}

Peyre, Herve ^{[1
]}

Al Khalfioui, Mohamed ^{[2
]}

Matta, Samuel ^{[2
]}

Leroux, Mathieu ^{[2
]}

Damilano, Benjamin ^{[2
]}

Brault, Julien ^{[2
]}

机构：

[1] Univ Montpellier, UMR CNRS 5221, Lab Charles Coulomb L2C, CC 074, FR-34095 Montpellier, France

[2] CNRS, CRHEA CNRS, Rue B Gregory, FR-06560 Valbonne, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 98卷

关键词：

Aluminum nitride; Mobility; Temperature dependence; Carrier concentration; Donor level; ALUMINUM NITRIDE; CRYSTALS; CONDUCTION; DEFECTS; GROWTH; LAYERS; GAN;

D O I：

10.1016/j.spmi.2016.08.038

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrical transport (resistivity and Hall Effect) have been studied in silicon doped aluminum nitride (AIN) thick epitaxial layers from 250 K up to 1000 K. The investigated samples, grown by molecular beam epitaxy were characterized by n-type conduction with an ambient temperature free carrier concentration of about (similar to)1 x 10(15) cm(-3). The donor level, situated about 250 meV below the conduction band edge, was found to be responsible for the experimentally observed increase of free carrier concentration with temperature. The temperature dependence of carrier mobility has been analyzed in the framework of a multimode scattering model. In the investigated samples the main scattering mechanism is supposed to be dislocation scattering. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：253 / 258

页数：6

共 32 条

[1]

[Anonymous], 1986, Thin Solid Films

[2]

Borisov B., 2005, APPL PHYS LETT, V87

[3] Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N [J].