Identification of quantum confined interband transitions in type-II InAs/GaSb superlattices using polarization sensitive photocurrent spectroscopy

被引：7

作者：

Gautam, Nutan ^{[1
]}

Barve, Ajit ^{[1
]}

Krishna, Sanjay ^{[1
]}

机构：

[1] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

关键词：

THEORETICAL PERFORMANCE; INFRARED DETECTORS; OPTICAL-PROPERTIES; SEMICONDUCTOR; PHOTODETECTORS; PROPOSAL; LASERS; CAMERA;

D O I：

10.1063/1.4767358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the use of polarization sensitive photocurrent spectroscopy for identifying the participating transitions in type-II InAs/GaSb strained layer superlattice system. Transverse electric and transverse magnetic photocurrents have been measured for both midwave infrared and longwave infrared superlattices, and prominent features have been analyzed to identify different interband transition energies and unambiguously predict the correct ordering of hole minibands. The interband transition energies have also been confirmed with theoretical simulations using empirical pseudopotential method. Order of the participating valence minibands has been determined as: heavy-hole1, light-hole1 and light-hole2, with increase in hole energy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767358]

引用

页数：4

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