High-power 1.8-μm InGaAsP/InP lasers

被引：6
|
作者：
Golikova, EG [1 ]
Kureshov, VA [1 ]
Leshko, AY [1 ]
Lyutetskii, AV [1 ]
Pikhtin, NA [1 ]
Ryaboshtan, YA [1 ]
Slipchenko, SO [1 ]
Sokolova, ZN [1 ]
Fetisova, NV [1 ]
Bondarev, AD [1 ]
Tarasov, IS [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2002年 / 28卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1458507
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Separately bounded InGaAsP/InP laser heterostructures with two stressed quantum wells emitting at a wavelength of 1.8 mum were obtained by metalorganic vapor-phase epitaxy. The laser diodes with a strip width of 100 mum provide for an output radiation power of 1.2 W in the continuous operation mode at a temperature of 20degreesC. A minimum threshold current density was 320 A/cm(2) and a differential quantum efficiency was eta(d) = 28% for a Fabry-Perot resonator length of 1.4 mm. The internal optical losses in the laser heterostructure studied amounted to 5.6 cm(-1). (C) 2002 MAIK "Nauka/Interperiodica".
引用
收藏
页码：113 / 115
页数：3
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