Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers

被引：67

作者：

Deppe, DG ^{[1
]}

Huffaker, DL ^{[1
]}

Csutak, S ^{[1
]}

Zou, Z ^{[1
]}

Park, G ^{[1
]}

Shchekin, OB ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1999年 / 35卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/3.777226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spontaneous emission spectra and lasing characteristics of long-wavelength (13-mu m) quantum-dot lasers are studied. It is found experimentally that nonradiative recombination can dominate the room-temperature efficiency and limit threshold. By describing the quantum-dot spectral emission as due to energy levels of a two-dimensional harmonic oscillator, rate equations are developed to account for the temperature-dependent spontaneous and lasing characteristics.

引用

页码：1238 / 1246

页数：9

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