Hall effect in single crystal CeCu2Si2 under high pressure

被引：1

作者：

Araki, S. ^{[1
]}

Shiroyama, Y. ^{[1
]}

Shinohara, T. ^{[1
]}

Ito, Y. ^{[1
]}

Ikeda, Y. ^{[1
]}

Kobayashi, T. C. ^{[1
]}

Seiro, S. ^{[2
]}

Geibel, C. ^{[2
]}

Steglich, F. ^{[2
]}

机构：

[1] Okayama Univ, Grad Sch Nat Sci & Technol, Okayama 7008530, Japan

[2] Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany

来源：

INTERNATIONAL CONFERENCE ON STRONGLY CORRELATED ELECTRON SYSTEMS (SCES 2011) | 2012年 / 391卷

基金：

日本学术振兴会;

关键词：

HEAVY-FERMION COMPOUNDS; SUPERCONDUCTIVITY;

D O I：

10.1088/1742-6596/391/1/012005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hall effect measurements were carried out under high pressures up to 4.9 GPa in a single crystal of CeCu2Si2. The temperature dependence of the Hall coefficient is interpreted to be composed of two peaks below room temperature. The high-temperature peak shows strong pressure dependence, where the peak shifts from 20 K at ambient pressure to 125 K at 4.9 GPa. This peak is a consequence of the anomalous Hall effect due to skew scattering. The low-temperature peak shifts from 5 K at ambient pressure to 15 K at 4.9 GPa and the magnitude of the peak shows the maximum around 4.1 GPa at which the superconducting transition temperature also reaches the maximum.

引用

页数：4

共 15 条

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