Band alignment determination of ZnO/PbSe heterostructure interfaces by synchrotron radiation photoelectron spectroscopy

被引：13

作者：

Cai, C. F. ^{[1
]}

Zhang, B. P. ^{[1
]}

Li, R. F. ^{[1
]}

Wu, H. Z. ^{[1
]}

Xu, T. N. ^{[1
]}

Zhang, W. H. ^{[2
]}

Zhu, J. F. ^{[2
]}

机构：

[1] Zhejiang Univ, Dept Phys, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China

来源：

EPL | 2012年 / 99卷 / 03期

关键词：

PBSE SEMICONDUCTOR NANOCRYSTALS; RAY PHOTOEMISSION SPECTRA; CARRIER-MULTIPLICATION; EFFICIENCY;

D O I：

10.1209/0295-5075/99/37010

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Band offsets at ZnO/PbSe heterostructure interfaces are determined by synchrotron radiation photoelectron spectroscopy. A type-I band alignment with the valence band offset (VBO) Delta E-V = 0.73 eV and conduction band offset (CBO) Delta E-C = 2.36 eV is concluded for ZnO/PbSe film heterojunctions. The approach is extended to ZnO/PbSe nanocrystal (NC) heterojunctions, which reveals that band alignment can be adjusted via varying the dot size and a type-II alignment is formed when the dot size is <= 5 nm. The small conduction band offset of the ZnO/PbSe film heterojunction and the tunable band alignment of the ZnO/PbSe NCs heterojunction with different crystal sizes shall benefit the design and fabrication of improved optoelectronic devices. Copyright (C) EPLA, 2012

引用

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