Screening of coherent LO phonons by interwell plasmon oscillations along the growth direction in GaAs/AlGaAs superlattices

被引:20
作者
Yee, KJ
Yee, DS
Kim, DS [1 ]
Dekorsy, T
Cho, GC
Lim, YS
机构
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Rhein Westfal TH Aachen, Inst Halbleitertech, D-52074 Aachen, Germany
[3] Konkuk Univ, Dept Appl Phys, Chungbook 380701, South Korea
关键词
D O I
10.1103/PhysRevB.60.R8513
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study coherent phonon oscillations in GaAs/AlGaAs superlattices and multiple quantum wells as a function of the barrier width. Strong, bulklike screened LO phonons accompany bare LO phonons for thin barrier samples, whereas for thicker barrier samples, only the bare LO phonons exist. These results strongly indicate that the coherent interwell plasmons oscillating across the barrier couple to LO phonons. The technique applied is a very sensitive way of probing the superlattice-multiple quantum well transition of collective charge oscillations.
引用
收藏
页码:R8513 / R8516
页数:4
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