Fabrication and temperature-dependent band gap shrinkage of α-phase Bi2O3 thin films grown by atomic layer deposition method

被引：2

作者：

Shen, Yude ^{[1
]}

Li, Yawei ^{[1
]}

Jiang, Kai ^{[1
]}

Zhang, Jinzhong ^{[1
]}

Duan, Zhihua ^{[1
]}

Hu, Zhigao ^{[1
]}

Chu, Junhao ^{[1
,2
]}

机构：

[1] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2013年 / 62卷 / 02期

基金：

中国国家自然科学基金;

关键词：

OPTICAL-PROPERTIES; BISMUTH OXIDE; ENERGY-GAP; ABSORPTION; CONDUCTION; SPECTRA;

D O I：

10.1051/epjap/2012130133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

alpha-Bi2O3 thin films were deposited on different substrates by atomic layer deposition method. The results of X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscope correspond to alpha-Bi2O3. The Fourier transform infrared spectroscopy analyses indicate that the reaction is rather complete during the deposition. Optical properties of the films have been investigated using ultraviolet-infrared transmittance spectra in the temperature range of 8-300 K. It is found that the band gap E-g decreases from 3.12 to 3.03 eV with the temperature. The parameters alpha(B) and Theta(B) of the Bose-Einstein model are 69.3 meV and 293.9 K, respectively. The band narrowing coefficient dE(g)/dT is -0.435 meV/K at room temperature. The present results can be considerable for future application of Bi2O3-based electro-optic and wide temperature range optoelectronic devices.

引用

页码：20303 / p1

页数：6

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