Intraband carrier dynamics in InAs/GaAs quantum dots stimulated by bound-to-continuum excitation

被引：24

作者：

Harada, Yukihiro ^{[1
]}

Maeda, Tsuyoshi ^{[1
]}

Kita, Takashi ^{[1
]}

机构：

[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 22期

关键词：

INFRARED PHOTODETECTORS; ABSORPTION; TRANSITIONS;

D O I：

10.1063/1.4810859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied state-filling-dependent intraband carrier dynamics in InAs/GaAs self-assembled quantum dots using two-color photoexcitation spectroscopy. The photoluminescence (PL) intensity was observed to be dramatically reduced by selectively pumping carriers from the intermediate state to the continuum state located above the conduction band edge, and the PL-intensity reduction decreased with an increase in the continuous-wave excitation power. We analyzed the observed state-filling-dependent intraband carrier dynamics by detailed modeling of carrier excitation and relaxation processes in which the two-photon absorption for the interband transition, Pauli blocking, and saturable absorption for the intraband transition is considered. (C) 2013 AIP Publishing LLC.

引用

页数：5

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