High electrical resistivity of pressureless sintered in situ SiC-BN composites

被引：27
作者：
Li, Yinsheng [1 ,2 ]
Wu, Haibo [1 ,2 ]
Yin, Jie [1 ]
Lu, Ping [1 ,2 ]
Yan, Yongjie [1 ]
Liu, Xuejian [1 ]
Huang, Zhengren [1 ]
Jiang, Dongliang [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
来源：
SCRIPTA MATERIALIA | 2013年 / 69卷 / 10期
基金：
中国国家自然科学基金;
关键词：
In situ SiC-BN composites; Microstructure; Electrical resistivity; Interface diffusion; BORON NITRIDE COMPOSITES; SILICON-CARBIDE CERAMICS; THERMAL-SHOCK RESISTANCE; MECHANICAL-PROPERTIES; MICROSTRUCTURE; CONDUCTIVITY; ADDITIVES; OXIDATION;
D O I：
10.1016/j.scriptamat.2013.08.016
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
SiC-BN composites with a BN content of 6 wt.% were pressureless sintered to similar to 99.4% theoretical density at 2200 degrees C for 1 h and found to have a high electrical resistivity of 1.24 x 10(10) Omega cm. Starting B4C and C were added to react partially with Si3N4 for in situ synthesis of BN and also to serve as sintering aids. Interface diffusion of B and N from BN into SiC was crucial to improving the insulating and dielectric properties through carrier compensation without causing any obvious decrease in the thermal conductivity. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：740 / 743
页数：4
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